[19p-PB10-1~22] 13.9 Compound solar cells

[19p-PB10-1] Elemental Distribution of Si/GaAs Interfaces Fabricated by Surface-Activated Bonding Revealed by Atom Probe Tomography Combined with Low-Temperature FIB

〇Yasuo Shimizu¹, Naoki Ebisawa¹, Yutaka Ohno¹, Jianbo Liang², Naoteru Shigekawa², Yasuyoshi Nagai¹ (1.IMR Tohoku Univ., 2.Osaka City Univ.)

Keywords:atom probe, focused ion beam, surface-activated bonding

表面活性化接合法で形成したSi/GaAs界面に着目し，３次元アトムプローブ測定のための針状試料を集束イオンビーム（FIB）を用いて低温下（-150 °C）で加工し，接合界面の急峻性を調べることでFIB加工時の温度の影響を調べた．