[19p-PB10-1~22] 13.9 Compound solar cells

[19p-PB10-13] Preparation of Cu₂Sn_1-xGe_xS₃ thin films using mist CVD method

〇Fumitaka Yoshihisa¹, Mao Kowata¹, Kunihiko Tanaka¹ (1.Nagaoka Univ. Tech.)

Keywords:Cu2Sn1-xGexS3, mist CVD, Thin film solar cell

In this study Cu₂Sn_1-xGe_xS₃(CTGS) thin films were fabricated by sulfurizing Cu, Sn, Ge contained precursor which deposited by mist CVD method. XRD of the fabricated CTGS thin films showed secondary phases. Therefore, it is necessary to investigate condition of sulfurization and starting solutions.