[19p-PB3-1~24] 13.7 Compound and power electron devices and process technology

[19p-PB3-21] Annealing of hole traps in hydrogen-ion-implanted n-GaN

〇(M2)Syun Ito¹, Yutaka Tokuda¹, Shiojima Kenji², Jyoji Ito³, Takahide Yagi³ (1.Aichi Inst. of Technol, 2.Univ of Fukui, 3.SHI-ATEX Co, Ltd)

Keywords:MCTS, Ion Implantation

We have studied the isochronal annealing behavior of defects induced in n-GaN by hydrogen implantation using MCTS. The GaN used was Si-doped (8.0x10¹⁶ cm^-3) n-GaN grown by MOVPE on n⁺-GaN substrate. The hydrogen implantation dose was 10¹³ cm^-2. H0 trap is observed in hydrogen-implanted samples with longer hole emission time constants than H1 trap. We speculate that H0 is related to Ga vacancies produced by hydrogen implantation. H0 trap shows a decrease in MCTS peak height together with the shift of emission time constants to longer ones. The H1 trap concentration obtained from the MCTS peak heights was reduced by a factor of 3 with annealing at 250°C. We are performing isochronal annealing at higher temperatures.