[19p-PB8-1~32] 12.4 Organic light-emitting devices and organic transistors

[19p-PB8-17] Time Domain Reflectometry and Quasi-static C-V on Pentacene TFT for Analyzing Channel Formation Dynamics

〇Takuto Honda¹, Hiroaki Murakami¹, Masatoshi Sakai¹, Yugo Okada², Yuichi Sadamitsu³, Yuta Hashimoto³, Nozomi Onodera³, Kazuhiro Kudo¹ (1.Department of Electrical and Electronic Engineering., Chiba Univ., 2.Center for Frontier Science, Chiba Univ., 3.Nippon Kayaku Co., Ltd.)

Keywords:Organic semiconductor, Career dynamics, Interface trap density

In the dynamics of the organic thin film transistor, carrier traps are present at the semiconductor / insulator interface, which affects the formation of the channel. Therefore, clarifying the relationship between the interface trap density and the channel formation process contributes to the improvement of the characteristics of the organic semiconductor device. In this report, the interface carrier trap density is extracted from the sweep rate dependence in quasi-static C-V measurement, and the relationship with the channel formation dynamics by time domain reflectometry is discussed.