[19p-PB8-1~32] 12.4 Organic light-emitting devices and organic transistors

[19p-PB8-26] Fabrication of high carrier density injected OFET using TiO₂ dielectric film

〇Yuta Oyoshi¹, Ryoma Ishii¹, Yugo Okada², Masatoshi Sakai¹, Kazuhiro Kudo¹ (1.Graduate School of Engineering,Chiba Univ., 2.CFS,Chiba Univ.)

Keywords:organic semiconductor, low voltage, titanium oxide

For future applications to wearable devices utilizing the characteristics of organic semiconductors, the problems associated with high operating voltages of organic transistors must be solved. In this research, low voltage operating of the organic transistor is performed by increasing the capacitance of the insulating film used in the transistor structure by using a TiO₂ layer of nm order. As a result of fabricating a field effect transistor using pentacene and measuring a transfer characteristic, the operation at a low threshold voltage of -0.25 V was confirmed.