[20a-E201-1~10] 17.3 Layered materials

[20a-E201-8] Observation of MoS₂ surface state change before and after gas molecule adsorption applying high sensitivity electrical property change in MoS₂-FET molecular sensor

〇Hiroki Waizumi¹, Tsuyoshi Takaoka², Alam Md Iftekharul¹, Muhammad Shamim Al Mamun¹, Yudai Tanaka¹, Tadahiro Komeda² (1.Tohoku Univ., 2.IMRAM, Tohoku Univ.)

Keywords:transition metal dichalcogenide, field effect transistor, surface chemistry

Development of FET using MoS₂, which is a transition metal dichalcogenide, has been reported. We want to apply it to a highly sensitive molecular sensor that can cope with a very small amount of molecular adsorption by detecting the change in the surface state of MoS₂ as a result of the molecular adsorption as a change in the electrical characteristics of the FET. In this presentation, tetracyanoquinodimethane (TCNQ), which is expected to cause charge transfer when adsorbed on MoS₂, was selected, and changes in the surface state of MoS₂ due to the adsorption of TCNQ molecules were observed.