[20a-E216-7~13] 【CS.8】 Code-sharing Session of 10.1, 10.2, 10.3 & 10.4

▼ [20a-E216-10] Spin-orbit-torque induced magnetization switching for an ultra-thin MnGa grown on NiAl buffer layer

〇(M2)Fumiaki Shimohashi¹, Bao Nguyen¹, Michihiko Yamanouchi², Tetsuya Uemura¹ (1.IST, Hokkaido Univ., 2.RIES, Hokkaido Univ.)

Keywords:spintronics, spin-orbit-torque

Spin-orbit-torque (SOT) induced magnetization switching has recently attracted much interest as an important basic technology for next-generation spintronic devices. MnGa is a promising electrode material for such spintronic devices owing to relatively large perpendicular magnetic anisotropy (PMA), relatively small saturation magnetization, and relatively high spin polarization. However, since it is not easy to fabricate ultra-thin MnGa layer with clear PMA, demonstration of the SOT magnetization reversal has been limited to for MnGa grown on CoGa-buffered MgO substrate, or on GaAs substrate. In this study, we observed clear PMA and demonstrated the SOT magnetization reversal for a 1-nm-thick MnGa grown on a NiAl buffer layer.