[20a-E216-1~6] 10.1 Emerging materials in spintronics and magnetics (including fabrication and charactrization methodologies)

[20a-E216-5] Anomalous Hall effect in non-collinear antiferromagnetic Mn₃(Ni_0.35Cu_0.65)N thin films

〇Ryuta Miki¹, Tetsuya Hajiri¹, Kan Zhao², Hua Chen³, Philipp Gegenwart², Hidefumi Asano¹ (1.Nagoya Univ., 2.Augsburg Univ., 3.Colorado State Univ.)

Keywords:anomalous Hall effect, antiferromagnet, antiperovskite manganese nitride

To realize high performance devices for magnetic memory, antiferromagnet is promissing material because of its great magnetic properties. Recent theoretical studies predict that anomalous Hall effect (AHE) can appear in non-collinear antiferromagnets such as antiperovskite nitride Mn₃AN. In this presentation, we report a relatively large AHE in Mn₃(Ni_0.35Cu_0.65)N thin films on a MgO(111) substrates.