The 80th JSAP Autumn Meeting 2019

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13 Semiconductors » 13.7 Compound and power electron devices and process technology

[20a-E301-1~12] 13.7 Compound and power electron devices and process technology

Fri. Sep 20, 2019 9:00 AM - 12:15 PM E301 (E301)

Kenji Shiojima(Univ. of Fukui)

9:00 AM - 9:15 AM

[20a-E301-1] [INVITED] Temperature dependence of barrier height in Ni/n-GaN Schottky barrier diode

〇Takuya Maeda1, Masaya Okada2, Masaki Ueno2, Yoshiyuki Yamamoto2, Tsunenobu Kimoto1, Masahiro Horita3, Jun Suda3 (1.Kyoto Univ., 2.Sumitomo Electric Industries, 3.Nagoya Univ.)

Keywords:JSAP Paper Award