[20a-E306-1~12] 8.5 Plasma phenomena, emerging area of plasmas and their new applications

[20a-E306-11] Organic metal ion beam production for stoichiometric crystalline film formation

〇Satoru Yoshimura¹, Satoshi Sugimoto¹, Takae Takeuchi², Kensuke Murai³, Masato Kiuchi³ (1.Osaka Univ., 2.Nara Women's Univ., 3.AIST)

Keywords:silicon carbide, silicon oxide, ion beam

We have proposed an experimental methodology which makes it possible to deposit silicon carbide (SiC) films on Si substrates with a low-energy mass-selected ion beam system using hexamethyldisilane as a gas source. In this study, one of the fragment ions produced from hexamethyldisilane, SiCH₄⁺, was mass-selected. The ion energy was approximately 100 eV. Then, the SiCH₄⁺ ions were irradiated to a Si(100) substrate. When the temperature of the Si substrate was set at 800°C during the ion irradiation, the X-ray diffraction and Raman spectroscopy of the substrate following the completion of ion irradiation experiment demonstrated the occurrence of 3C-SiC deposition.