[20a-E310-1~10] 15.4 III-V-group nitride crystals

[20a-E310-2] Micro-Photoluminescence Mapping of Surface Plasmon Enhanced Emissions from polar/semipolar InGaN/GaN

〇Jun Kametani¹, Toshiki Nakamura¹, Fumiya Murao¹, Tetsuya Matsuyama¹, Kenji Wada¹, Narihito Okada², Kazuyuki Tadatomo², Koichi Okamoto¹ (1.Osaka Pref. Univ., 2.Yamaguchi Univ.)

Keywords:Plasmonics, InGaN/GaN, semipolar

The luminous efficiencies of green lights are still not enough. InGaN/GaN QWs grown on semipolar plane such as {11-22} planes have been developed and studied to overcome this “green-gap problem” of LEDs. Surface plasmon (SP) resonance is also promising method to apply to high-efficiency LEDs. In this study, The Mechanism of SP enhanced light emissions were investigated for polar/semipolar InGaN/GaN quantum wells (QWs).