[20a-E314-1~8] 16.3 Bulk, thin-film and other silicon-based solar cells

[20a-E314-1] Numerical analysis of dislocation density in Si single crystal with seed crystal

〇Satoshi Nakano¹, Xin Liu¹, Xuefeng Han¹, Koichi Kakimoto¹ (1.RIAM, Kyushu Univ.)

Keywords:dislocation, seeded directional solidification method, oxygen

Dislocation significantly decrease the solar cell performance. Recently, silicon crystals for solar cells were grown by the seeded directional solidification (seed-cast) method because of cost-effective and high quality. It has been reported that oxygen atoms in Si single crystal decrease velocity of dislocation motion. In this study, we investigated the relation between oxygen concentration in the silicon crystal with different seeds and dislocation multiplication by numerical analysis.