[20a-N304-1~8] 【CS.3】 Code-sharing Session of 3.10 & 3.11 & 9.2 & 11.5 & 13.6

▲ [20a-N304-7] Current-injection quantum-entangled-photon-pair emitter using GaAs quantum dots: Robustness against increasing temperature

〇(P)Neul Ha¹, Takaaki Mano¹, Takashi Kuroda¹, Yoshiki Sakuma¹, Kazuaki Sakoda¹ (1.NIMS)

Keywords:Quantum dots, Quantum entangled photon pair

The development of an electrically driven quantum-entangled-photon-pair emitter is essential for practical applications in a quantum network. In this study, we report high-temperature operating quantum-entangled-photon-pairs emitting diode based on GaAs/AlGaAs quantum dots (QD) on GaAs (111)A. Electroluminescence spectrum of our single QDs showed three lines identified as biexciton, excion, and positively-charged exciton. In coincidence measurements, we confirmed the correlation between biexciton and exciton, which is a proof for the formation of quantum entanglement. The temeprature dependence of the fidelity to the Bell state suggests that the maximum operation temeprature of our device is ~ 65 K, which is limited by the shallow confinement of charge carriers in GaAs/AlGaAs system.