9:30 AM - 11:30 AM
[20a-PB2-21] Temperature dependence of I-V characteristics of MAPbI3 pellet with a thickness of mm under visible light irradiation
Keywords:perovskite solar cell, photoconductor, heat press
Chalcogenide compounds such as cadmium sulfide (CdS) and cadmium selenide (CdSe) are known as photoresistors. They have been utilized for both photo-sensing and development of efficient solar cells. For the development of the solar cells, lead halide perovskite materials can be utilized as a photo absorber material and their semiconductor characteristics have attracted enormous attention. As the lead halide perovskite possesses the semiconducting characteristics, it is expected that the perovskite can be utilized for the photoresistor applications just like the chalcogenide compounds. We recently succeeded in preparing a perovskite pellet with a thickness of 1 mm scale by using the heat-press treatment. When we fabricated a positive Au electrode and a negative TiO2 electrode on the top and bottom sides of the perovskite pellet respectively and then the pellet is illuminated with photo radiations. A decrease in the electric resistance is observed in the current-voltage measurements. This decrease is due to the influence of radiation wavelength and irradiance. We also attempted to measure temperature dependence of these phenomena.