[20p-C309-1~10] Applications of new ferroelecric materials for the future electric devices

[20p-C309-1] Some Remarkable Physical Properties of Ferroelectric Materials for Ferroelectric-Gate Transistor Applications

〇Eisuke Tokumitsu¹ (1.JAIST)

Keywords:ferroelectric material, ferroelectric-gate transistor

In this talk, at first, an overview of the historical background of ferroelectric gate nonvolatile memory devices is presented. Next, as an example of remarkable physical properties of ferroelectric materials, large charge contrability is pointed out and a ferroelectric gate transistor using a conductive oxide ITO as a channel is demonstrated. Finally, we introduce recent research to realize steep slope MOSFET using negative capacitance characteristics of ferroelectric materials, along with the results of simple analysis of polarization reversal.