The 80th JSAP Autumn Meeting 2019

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Symposium (Oral)

Symposium (technical) » Applications of new ferroelecric materials for the future electric devices

[20p-C309-1~10] Applications of new ferroelecric materials for the future electric devices

Fri. Sep 20, 2019 1:45 PM - 6:00 PM C309 (C309)

Masaharu Kobayashi(Univ. of Tokyo), Masumi Saitoh(Toshiba Memory)

5:30 PM - 6:00 PM

[20p-C309-10] Resistive Switching Effect and Artificial Synapse Applications of BaTiO3-based FTJs

〇Akihito Sawa1, Hiroyuki Yamada1, Pablo Stoliar1, Yoshikiyo Toyosaki1 (1.AIST)

Keywords:Ferroelectrics, Tunnel junction

We will first review resistive switching and memory applications of BaTiO3-based ferroelectric tunnel junctions (FTJs) and then present our research on the mechanism of resistive switching in the FTJs. Finally, we will give our recent results of artificial synapse applications of BaTiO3-based FTJs.