4:30 PM - 5:00 PM
[20p-C309-8] Status and prospects of ferroelectric HfO2 tunnel junction
Keywords:non-volatile memory, ferroelectric, ferroelectric tunnel junction
Presentation information
Symposium (Oral)
Symposium (technical) » Applications of new ferroelecric materials for the future electric devices
[20p-C309-1~10] Applications of new ferroelecric materials for the future electric devices
Fri. Sep 20, 2019 1:45 PM - 6:00 PM C309 (C309)
Masaharu Kobayashi(Univ. of Tokyo), Masumi Saitoh(Toshiba Memory)