[20p-E216-8~20] 10.2 Fundamental and exploratory device technologies for spin

△ [20p-E216-17] Gate voltage dependence of local spin accumulation voltage in Si-based lateral spin valve

〇(D)Soobeom Lee¹, Fabien Rortais¹, Ryo Ohshima¹, Yuichiro Ando¹, Yoshishige Suzuki², Hayato Koike³, Masashi Shiraishi¹ (1.Kyoto Univ., 2.Osaka Univ., 3.TDK Corp.)

Keywords:Silicon, Spin Transistor, Spin injection

In this research, we investigated gate voltage dependence of local spin accumulation voltage in Si-based lateral spin valve device. Gate voltage was applied at back side of SOI (Silicon-on-insulator) substrate. Channel conductivity was modified by several orders of magnitudes with applied gate voltage, while spin diffusion length was only two-times modified. It revealed that the control by gate voltage of local spin accumulation voltage was determined by a competition between spin drift effect and the conductivity mismatch. A simple 1-dimensional model with spin-drift diffusion equation described gate voltage dependence of local spin accumulation voltage.