The 80th JSAP Autumn Meeting 2019

Presentation information

Oral presentation

10 Spintronics and Magnetics » 10.2 Fundamental and exploratory device technologies for spin

[20p-E216-8~20] 10.2 Fundamental and exploratory device technologies for spin

Fri. Sep 20, 2019 3:30 PM - 7:00 PM E216 (E216)

Shinji Miwa(Univ. of Tokyo), Mikihiko Oogane(Tohoku Univ.)

3:30 PM - 3:45 PM

[20p-E216-8] Intrinsic Spin Decay Length in Antiferromagnetic Insulator

Hiroto Sakimura1,2, Akio Asami2, Hiroki Hayashi2, Ji Shi1, Kazuya Ando2 (1.Tokyo Tech., 2.Keio Univ.)

Keywords:Antiferromagnet, Insulator, Spin current

In this work, we report intrinsic spin decay length of a prototypical antiferromagnetic insulator, NiO. We found that at an antiferromagnetic(AF)/ferromagnetic(FM) interface, a spin current generated by spin pumping is strongly suppressed by two-magnon scattering (TMS). By eliminating the two-magnon contribution by controlling the magnetization angle, we discovered that the characteristic length of spin decay in polycrystalline NiO changes by two-orders of magnitude through the paramagnetic to antiferromagnetic transition. The spin decay length in the antiferromagnetic state is around 100 nm, which is an order of magnitude longer than that previously believed. The activation of TMS is inevitable at AF/FM interface (independent of the combination of materials). Thus, our discovery points out the significance of removing the effect of TMS in spin pumping experiments, which provides a crucial piece of information for the fundamental understanding of the physics of spin transport.