The 80th JSAP Autumn Meeting 2019

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Oral presentation

13 Semiconductors » 13.2 Exploratory Materials, Physical Properties, Devices

[20p-E303-1~14] 13.2 Exploratory Materials, Physical Properties, Devices

Fri. Sep 20, 2019 1:45 PM - 5:45 PM E303 (E303)

Haruhiko Udono(Ibaraki Univ.), Yoshikazu Terai(Kyushu Inst. of Tech.), Kosuke Hara(Univ. of Yamanashi)

2:30 PM - 2:45 PM

[20p-E303-4] Formation of AlScN film by sputtering

〇SungLin Tsai1, Kazuki Kusafuka1, Takuya Hoshii1, Hitoshi Wakabayashi1, Kazuo Tsutsui2, Kuniyuki Kakushima1 (1.Tokyo Tech. School of Eng., 2.Tokyo Tech. IIR)

Keywords:AlScN film