[20p-E303-1~14] 13.2 Exploratory Materials, Physical Properties, Devices

△ [20p-E303-9] Phase-Shifting Electron Holography for In Situ Measurement of Electric Potential, Field and Charge Density Distributions in a Working P-N Junction Diode

〇(P)Satoshi Anada¹, Kazuo Yamamoto¹, Hirokazu Sasaki², Naoya Shibata^1,3, Yujin Hori², Kouhei Kinugawa², Akihiro Imamura², Tsukasa Hirayama¹ (1.JFCC, 2.Furukawa Electric, 3.Univ. Tokyo)

Keywords:in situ observation, electron holography, p-n junction

We combined an in situ biasing technique with phase-shifting electron holography to measure the electric potential, field, and charge density distributions of a GaAs p-n junction. We obtained precise electric potential profiles and successfully converted them into smooth electric field and charge density profiles without any fitting simulations. From these profiles, we evaluated the potential difference across the p-n junction, depletion layer width, and the concentration of activated dopants in the biased GaAs specimen.