The 80th JSAP Autumn Meeting 2019

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16 Amorphous and Microcrystalline Materials » 16.1 Fundamental properties, evaluation, process and devices in disordered materials

[20p-E304-1~13] 16.1 Fundamental properties, evaluation, process and devices in disordered materials

Fri. Sep 20, 2019 1:45 PM - 5:15 PM E304 (E304)

Kenji Shinozaki(AIST), Tamihiro Gotoh(Gunma Univ.), Toshihiro Nakaoka(Sophia Univ.)

2:30 PM - 2:45 PM

[20p-E304-4] Local structure of Nb and/or N doped TiO2 film formed by reactive sputtering

〇Toshihiro Okajima1, JunJun Jia2, Yuzo Shigesato3 (1.SAGA-LS, 2.Waseda Univ., 3.Aoyamagakuin Univ.)

Keywords:TiO2 thin film, Local structure

Our latest report revealed the Nb and/or N doping effected the selective anatase TiO2 films growth by reactive sputter depositions. In order to reveal the local structures and the phase stability in the anatase TiO2 films, we investigated XAFS measurements and first principled DFT calculations for Nb and/or N doped TiO2 films prepared by reactive sputtering process in this study. The calculated formation energies of Nb doped TiO2 indicated that the geometric doping configuration of Nb ion in TiO2 films is different from the case of Sn doped TiO2 films.