[20p-E310-1~21] 15.4 III-V-group nitride crystals

△ [20p-E310-15] Precise composition control for AlInN/GaN DBRs by in-situ curvature measurements

〇(M2)Kei Hiraiwa¹, Wataru Muranaga¹, Sho Iwayama¹, Kazuki Kiyohara¹, Tetsuya Takeuchi¹, Satoshi Kamiyama¹, Motoaki Iwaya¹, Isamu Akasaki^1,2 (1.Meijo Univ., 2.ARC Nagoya Univ.)

Keywords:DBR, AlInN, Curvature

As one of approaches to fabricate high quality AlInN/GaN DBRs, in-situ curvature measurement has been reported. The lattice constant of the AlInN layer can be grasped from the slope which is with respect to time of the curvature profile. If the structure is uniform, the slope should be constant. In this study, as epi growth progresses, the slope was not constant but changed in the negative(compressive) direction. The factor may be an increase in InN molar fraction.