[20p-PB3-1~11] 13.6 Nanostructures, quantum phenomena, and nano quantum devices

[20p-PB3-11] Spin dynamics in In_0.5Ga_0.5As quantum dots embedded in GaAs nanopillars

〇(D)Yafeng Chen¹, Takayuki Kiba², Natsumi Iijima², Junichi Takayama¹, Akio Higo³, Satoshi Hiura¹, Akihiro Murayama¹ (1.IST Hokkaido Univ., 2.Kitami Inst. of Tech, 3.VDEC, Univ. of Tokyo)

Keywords:quantum dot, nanopillar, spin relaxation

So far many groups have explored the ability to manipulate electron spin relaxation from the spatiotemporal kinetics of the spin polarization. A strong increase of the spin relaxation time from a wide three-dimensional (3D) and two-dimensional (2D) spin transport channel to a narrow one-dimensional (1D) quantum limit of semiconductor nanostructure have been demonstrated theoretically [1] and experimentally [2]. Our group has researched spin dynamics of the 3D and 2D spin transport to quantum dot (QD) [3]. In this work, we study the spin dynamics including relaxation at the QD excited states in the In_0.5Ga_0.5As QDs embedded in a GaAs nanopillar structure enabling confinement of optically excited electons, comparing with the as-grown layered In_0.5Ga_0.5As QD structure.