[20p-PB3-1~11] 13.6 Nanostructures, quantum phenomena, and nano quantum devices

[20p-PB3-3] Room Temperature Negative Differential Resistance of Si/CaF₂ Triple-barrier Resonant Tunneling Diodes with high peak current density

〇Hiroki Tonegawa¹, Yoshiro Kumagai¹, Kizashi Mikami¹, Kodai Hirose¹, Kanta Tomizawa¹, Takumi Kaneko¹, Honami Sato¹, Masahiro Watanabe¹ (1.Tokyo tech)

Keywords:Resonant Tunneling Diodes, Room Temperature Negative Differential Resistance