[21a-B31-1~8] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[21a-B31-6] In-situ observation of crystallization of amorphous Sn-doped In₂O₃ films

〇Yutaka Furubayashi¹, Shintaro Kobayashi², Makoto Maehara³, Hisashi Kitami^1,3, Toshiyuki Sakemi³, Katsuhiko Inaba², Tetsuya Yamamoto¹ (1.Kochi Univ. Tech., 2.Rigaku Corp., 3.Sumitomo Heavy Industries, Ltd.)

Keywords:Indium oxide, Amorphous film, Crystalization

Thermally-crystalized amorphous In₂O₃ (a-IO) films have a large mobility. Therefore, they have been applied to solar cells. Although there are many reports on a crystalization of a-IO, few research have focused on a growth condition with the same composition. In this study, we investigated in-situ X-ray observation by using a two-dimensional ditector, in order to elucidate a dynamics of the crystalization of amorphous Tin-doped In₂O₃ (ITO) films grown under various conditions by using the same ITO target.