[21a-E216-1~4] 10.2 Fundamental and exploratory device technologies for spin

▲ [21a-E216-1] Influence of FeCo termination layer insertion on voltage-controlled magnetic anisotropy effect in the Ir-doped Fe/MgO junction

〇Takayuki Nozaki¹, Masaki Endo², Tatsuya Yamamoto¹, Tomohiro Nozaki¹, Makoto Konoto¹, Hiroyuki Ohmori², Yutaka Higo², Hitoshi Kubota¹, Akio Fukushima¹, Masanori Hosomi², Yoshishige Suzuki^1,3, Shinji Yuasa¹ (1.AIST, 2.Sony Semiconductor Solutions Corp., 3.Osaka Univ.)

Keywords:Spintronics, Voltage-controlled magnetic anisotropy, Magnetic tunnel junction

Voltage-controlled magnetic anisotropy(VCMA) effect is a promising approach to realize the magnetization switching with ultra-low power. In this work, we investigated an influence of insertion of ultrathin FeCo termination layer in the Ir-doped Fe/MgO junctions. The introduction of CoFe alloy with Co-rich composition resulted in the enhancement of the VCMA coefficient and maximum value of -350 fJ/Vm was achieved.