[21a-E216-5~11] 10.3 Spin devices, magnetic memories and storages

▲ [21a-E216-9] Fabrication of magnetic tunnel junctions with a metastable bcc-Co₃Mn alloy

〇(M2)Kazuma Kunimatsu^1,2, Tomoki Tsuchiya^3,4, Kelvin Elphick⁵, Tomohiro Ichinose², Kazuya Suzuki^2,4, Atsufumi Hirohata⁵, Shigemi Mizukami^2,3,4 (1.Grad. Sch. of Eng, Tohoku Univ., 2.WPI-AIMR, Tohoku Univ., 3.CSIS,CRC Tohoku Univ., 4.CSRN, Tohoku Univ., 5.Univ. of York)

Keywords:TMR