[21a-E301-1~13] 13.7 Compound and power electron devices and process technology

[21a-E301-6] n-type AlN MESMETs using graded AlGaN contact layers

〇Masanobu Hiroki¹, Kazuhide Kumakura¹ (1.NTT BRL)

Keywords:AlN, MESFET

Recently, we improved the contact characteristics of n-AlN by forming a graded AlGaN contact layer and obtained good Ohmic characteristics. In this study, we fabricated n-AlN MESFETs using the graded AlGaN contact layer. The maximum drain current at V_gs = 2 V and V_ds = 20 V was 420 uA/mm. The off-state breakdown voltage (V_b) was 280 V when the distance between the gate and drain electrodes (L_gd) was 1 um. V_b increased with increasing L_gd. V_b of 1680 V was obtained for L_gd = 11 um.