[21a-E301-1~13] 13.7 Compound and power electron devices and process technology

[21a-E301-8] Study of low resistivity regions generated on the process of selective area growth of GaN Fin structures

〇Ken Takayama¹, Hayato Mukai¹, Takuya Hamada¹, Tokio Takahashi², Toshihide Ide², Mitsuaki Shimizu², Takuya Hoshii¹, Kuniyuki Kakushima¹, Hitoshi Wakabayashi¹, Hiroshi Iwai¹, Kazuo Tsutsui¹ (1.Tokyo Tech, 2.AIST)

Keywords:FinFET, selective area growth method, transmission line model measurement