[21a-E310-1~10] 15.4 III-V-group nitride crystals

△ [21a-E310-6] GaN bulk Crystal Growth by the Acidic Ammonothermal Method

〇kouhei kurimoto^1,2, quanxi bao^1,2, makoto saito^1,3, rinzo kayano², daisuke tomida¹, kouhei shima¹, kazunobu kojima¹, toru ishiguro¹, shigefusa chichibu¹ (1.IMRAM-Tohoku Univ., 2.Japan Steel Work., 3.Mitsubishi Chemical Corp.)

Keywords:GaN, Ammonothermal Method, bulk Crystal

The acid ammonothermal method is expected as one of mass production methods for large diameter bulk GaN crystals.So far, we have reported the results of crystal growth in a pressure vessel for GaN crystal growth with an inner diameter of 60 mm, which enables the production of 2-inch diameter wafers. In this talk, we will report on the growth results using a pressure vessel with an inner diameter of 120 mm, which enables crystal growth to a larger size of 4 inches.