[21a-E310-1~10] 15.4 III-V-group nitride crystals

[21a-E310-8] Thermal annealing effects on SCAAT^TM substrate grown toward m-direction

〇Kenji Iso¹, Yutaka Mikawa¹, Hirotaka Ikeda¹, Kazuhiro Hotta¹, Tae Mochizuki¹, Satoru Izumisawa¹ (1.Mitsubishi Chem.)

Keywords:SCAAT, ammonothermal, annealing

One of characteristics for GaN substrate grown by ammonothermal method was a strong YL emission. Obtained GaN substrate was annealed to relieve the strain in the crystal. Yellow color for GaN substrate disappeared and several characteristics such as PL and FTIR spectra were changed by annealing GaN substrate grown toward m-direction.