[21a-E310-1~10] 15.4 III-V-group nitride crystals

[21a-E310-9] Reuse Method of GaN Substrate by Using Laser Slicing Techniques

Atsushi Tanaka^1,2, 〇Yasunori Igasaki¹, Hiroshi Amano^1,2,3,4 (1.Nagoya Univ. IMaSS, 2.NIMS, 3.Nagoya Univ. ARC, 4.NU VBL)

Keywords:gallium nitride, Laser processing

A GaN on GaN (an epitaxial GaN layer grown on a GaN substrate) have attracted much attention due to its excellent performances. However, high cost of GaN substrate has hindered its commercial widespread. In this study, we propose a method to reduce cost of GaN devices based on laser slicing techniques. This method enabled to decrease slicing loss and to make utilizable peeled slices. Here we achieved peeling a 400 um thick 5 mm square GaN substrate into two slices of 340 um and 60 um thickness. The surface roughness of peeled slices was within 10 um.