[21a-E311-1~7] 15.6 Group IV Compound Semiconductors (SiC)

[21a-E311-6] Dry etcher design for 200 mm-diameter SiC wafer by using ClF₃ gas

〇Ryohei Kawasaki¹, Hitoshi Habuka¹, Yoshinao Takahashi², Tomohisa Kato³ (1.Yokohama Nat. Univ., 2.KANTO DENKA KOGYO, 3.AIST)

Keywords:ClF3, Etching, SiC

In order to improve the productivity of devices using semiconductor silicon carbide (SiC), development of a technology for etching a SiC wafer at high speed and uniformly using chemical reactions is expected. In this study, we designed a dry etcher for 200 mm-diameter SiC wafer using chlorine trifluoride (ClF3) gas and evaluated it by numerical calculation.