[21a-PA3-1~7] 13.2 Exploratory Materials, Physical Properties, Devices

[21a-PA3-1] Optimization of Si/Fe composition ratio in growth of Sb-doped β-FeSi₂ epitaxial films

〇Ryota Kinoshita¹, Abe Mitsuki¹, Hajime Eguchi¹, Yoshikazu Terai¹ (1.Kyushu Inst. of Tech)

Keywords:beta-FeSi2, Sb doped

We have fabricated Sb-doped β-FeSi₂ epitaxial films to control the electron density of β-FeSi₂ epitaxial films. As a result, the electron density of 6 × 10¹⁸ cm^-3 was confirmed in the sample which was activated at 600 °C in N₂ atmosphere. In this study, Sb-doped β-FeSi₂ epitaxial films were prepared by changing the Si/Fe composition ratio during epitaxial growth, and the electron density and the Si/Fe composition ratio dependency of Sb substitution sites were verified.