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▼ [21a-PB1-37] Defect Repair of Graphene Oxide by Various Organic Solvents through Chemical Vapour Deposition
Keywords:Graphene oxide, Defect repair, Chemical vapour deposition
Fabrication of <gwmw class="ginger-module-highlighter-mistake-type-1" id="gwmw-15614363600977701675040">graphene</gwmw> by the reduction of graphene oxide (GO) is a rapidly expanding research area due to its ability to produce <gwmw class="ginger-module-highlighter-mistake-type-1" id="gwmw-15614363600970507651982">graphene</gwmw> in large quantities for a vast range of applications1. However, to fabricate pristine <gwmw class="ginger-module-highlighter-mistake-type-1" id="gwmw-15614363614630979175398">graphene</gwmw> like materials from GO is still a challenge to be overcome because of the inherent defects present in GO. So far, many attempts have made to overcome this issue; annealing at very high temperatures (such as 1800 oC)2, or reduction in the presence of an external carbon source3. In a previous work we reported that annealing of GO in the presence of ethanol results in <gwmw class="ginger-module-highlighter-mistake-type-1" id="gwmw-15614363647968935778403">graphene</gwmw>, or more precisely restored reduced graphene oxide (RGO), with improved electrical properties4. As a prolongation of this work, we have tried to repair the lattice structure of GO by using few other organic solvents (ethanol, methanol, <gwmw class="ginger-module-highlighter-mistake-type-1" id="gwmw-15614364564675249059567">iso</gwmw>-<gwmw class="ginger-module-highlighter-mistake-type-1" id="gwmw-15614364564672716219636">propanol</gwmw> and ethylene glycol) during thermal annealing through chemical <gwmw class="ginger-module-highlighter-mistake-type-1" id="gwmw-15614364051460645217826">vapour</gwmw> deposition (CVD) method. Characterization was mainly done by Raman spectroscopy and atomic force microscopy (AFM).