[21a-PB1-1~86] 17 Nanocarbon Technology (Poster)

[21a-PB1-57] CVD growth of MoS₂ thin films using the gap between two stacked substrates

〇Kousei Takahashi¹, Takao Nishi¹, Tsuyoshi Takaoka², Tadahiro Komeda² (1.Kobe City College of Tech., 2.IMRAM, Tohoku Univ.)

Keywords:Two-dimensional material, Molybdenum disulfide

Two-dimensional material Molybdenum disulfide (MoS₂) has a band gap and can be a channel material of a field effect transistor, unlike graphene. Few-layer molybdenum disulfide thin films were prepared on silicon single crystal substrates with oxide film by Chemical Vapor Deposition (CVD).Two-dimensionally grown molybdenum disulfide was obtained by flowing the source gas in the gap between the two overlapped substrates.