[21a-PB1-1~86] 17 Nanocarbon Technology (Poster)

[21a-PB1-64] Impact of PVA on carrier doping and electrical characteristics in MoS₂FET

〇Takahiro Matsuzaki¹, Tomoaki Oba¹, Takamasa Kawanago¹, Shunri Oda¹ (1.Tokyo Tech. QNERC)

Keywords:carrier doping, MoS2, PVA

In this study, by applying PVA on the surface of MoS₂ FET, we investigated the influence of the low temperature process on the contact doping to the MoS₂ channel layer and the electrical characteristics. As a result, normal FET behavior was observed in the electrical properties without PVA. On the other hand, after PVA coating, an increase in FET On current was confirmed, but a significant increase in Off current was also observed. This seems to be due to the reduction of the maximum depletion layer width in MoS₂.