[21a-PB1-1~86] 17 Nanocarbon Technology (Poster)

[21a-PB1-80] Resistance change memory operation and stability evaluation of titania nanosheet films

〇Masaya Sato¹, Masahiro Hara², Asami Funatsu², Ryo Nouchi^1,3 (1.Osaka Pref. Univ., 2.Kuma Univ., 3.JST-PRESTO)

Keywords:transition metal oxide nanosheets, resistance change memory, oxygen deficiencies

The operation of a resistance change memory, which consists of a metal oxide layer sandwiched by two electrodes, is generally based on the voltage-induced formation of oxygen deficiencies. In the case of an archetypal oxide material, titania, a thin film formed by sputtering or atomic layer deposition has been used as the oxide layer. In this presentation, we will report on a resistance change memory with a titania nanosheet, which possesses a unique two-dimensional structure, as the oxide layer.