[21p-B31-1~14] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[21p-B31-7] Growth of ε-Ga₂O₃ on a-plane Sapphire Substrate by Tri-Halide Vapor Phase Epitaxy

〇Kentaro Ema¹, Nao Takekawa¹, Ken Goto¹, Hisashi Murakami¹, Yoshinao Kumagai¹ (1.Tokyo Univ. of Agric. and Tech.)

Keywords:Wide Bandgap Semiconductor, Crystal Growth

In Ga₂O₃ growth by Tri-Halide Vapor Phase Epitaxy (THVPE) using metal trichloride as a source of group III, in order to investigate the influence on surface morphology and crystalline quality of Ga₂O₃ growth, the ratio of the second Cl₂ partial pressure to the first Cl₂ partial pressure (R_2nd) was changed under the fixed growth temperature at 500℃. It was found that GaCl₃ can be generated preferentially by increasing R_2nd, and a Ga₂O₃ film having a smooth surface without particle formation can be obtained.