[21p-C309-1~9] 6.1 Ferroelectric thin films

[21p-C309-1] Piezoelectric properties of PZT single crystal thin film using tetragonal zirconia

〇Takeshi Kijima¹, Takekazu Shigenai¹, Yukinori Tani¹, Akio Konishi¹ (1.KRYSTAL Inc.)

Keywords:Tetragonal zirconia, Single crystal PZT, Growing anything into a single crystal

By using ZrO₂ (100) for the buffer layer, a very high quality PZT (001) single crystal thin film could be obtained. From the pole figure, as a result of coherent growth of the PZT thin film on Cube on cube on Si, it was a very good c-axis single orientation film. At the same time, very excellent physical properties (Tc > 600 degree C) and piezoelectricity (d₃₁ = −250 pm / V) were exhibited.