[21p-E301-1~7] 13.7 Compound and power electron devices and process technology

[21p-E301-6] Interface analysis of GaAs/Diamond direct bonding

〇Yuji Nakamura¹, Yasuo Shimizu², Yutaka Ohno², Tianzhuo Zhan³, Yuichiro Yamashita⁴, Kenji Shirasaki², Yasuyoshi Nagai², Takanobu Watanabe³, Makoto Kasu⁵, Naoteru Shigekawa¹, Jianbo Liang¹ (1.Osaka City Univ., 2.IMR Tohoku Univ., 3.Waseda Univ., 4.AIST, 5.Saga Univ.)

Keywords:diamond, semiconductor, GaAs