[21p-E310-1~12] 15.4 III-V-group nitride crystals

[21p-E310-2] - Laser Induced Ohmic Contact Formation(LOC) - Laser-induced High Performance Local Ohmic Electrode Formation for Vertical GaN Devices

〇Teruhisa Kawasaki¹, Noriko Kurose², Tsutomu Araki², Yoshinobu Aoyagi² (1.Sumitomo Heavy Inds., 2.Ritsumeikan Univ.)

Keywords:GaN, ohmic, laser

As a new method of preventing deterioration during electrode manufacturing for the purpose of improving the quality of vertical GaN devices, We developed the LOC method that is irradiating laser only to the electrode at optimum energy and instantly alloying it to form an ohmic electrode.We succeeded in making p-type and n-type ohmic electrodes.
The greatest feature of the LOC method is to create an electrode of the required size at an optimal temperature and time at any place without damaging the device.