Electronic Structure Analysis in GaN with Mg Impurities and Screw Dislocation

Takashi Nakano; Yosuke Harashima; Kenta Chokawa; Masaaki Araidai; Kenji Shiraishi; Atsushi Oshiyama; Akira Kusaba; Yoshihiro Kangawa; Atsushi Tanaka; Yoshio Honda; Hiroshi Amano

Presentation information

Oral presentation

15 Crystal Engineering » 15.4 III-V-group nitride crystals

[21p-E310-1~12] 15.4 III-V-group nitride crystals

Sat. Sep 21, 2019 12:45 PM - 4:00 PM E310 (E310)

Atsushi Kobayashi(Univ. of Tokyo), Koichi Naniwae(USHIO OPTO SEMICONDUCTORS, INC.)

1:45 PM - 2:00 PM

△ [21p-E310-5] Electronic Structure Analysis in GaN with Mg Impurities and Screw Dislocation

〇Takashi Nakano¹, Yosuke Harashima², Kenta Chokawa², Masaaki Araidai^2,1, Kenji Shiraishi^2,1, Atsushi Oshiyama², Akira Kusaba³, Yoshihiro Kangawa^4,2, Atsushi Tanaka², Yoshio Honda^2,1, Hiroshi Amano^2,1 (1.Graduate School of Engineering, Nagoya Univ., 2.IMaSS, Nagoya Univ., 3.Computer Centre, Gakushuin Univ., 4.RIAM, Kyushu Univ.)

Keywords:Gallium Nitride, dislocation, Electronic structure