[21p-E310-1~12] 15.4 III-V-group nitride crystals

[21p-E310-6] Modeling of the hopping conduction in semiconductors with dislocation and impurities from first-principles calculation

〇Yosuke Harashima¹, Takashi Nakano², Atsushi Oshiyama¹, Kenji Shiraishi^1,2 (1.IMaSS, Nagoya Univ., 2.Grad. Sch. Engineering, Nagoya Univ.)

Keywords:Gallium Nitride, dislocation, electronic structure

In this study, we propose theoretical modeling for the hopping conduction in a semiconductor with dislocation and impurities. It is difficult to consider the dislocation and impurities simultaneously in conventional models due to their too much simplicity. We perform first-principles calculation to derive density of states of the system with the dislocation and the impurity. We construct an effective model for the hopping conductance from the derived density of states. In the presentation, we will give a talk about the details of the derivation and an example for a current-voltage characteristics.