The 80th JSAP Autumn Meeting 2019

Presentation information

Oral presentation

6 Thin Films and Surfaces » 6.3 Oxide electronics

[21p-N302-1~10] 6.3 Oxide electronics

Sat. Sep 21, 2019 1:15 PM - 4:00 PM N302 (N302)

Hisashi Shima(AIST), Kei Noda(Keio Univ.), Kentaro Kinoshita(Tokyo Univ. of Sci.)

3:00 PM - 3:15 PM

[21p-N302-7] Synthesis and fast H conduction of new lanthanum oxyhydride LaH3−2xOx

〇(D)Keiga Fukui1, Soshi Iimura1, Tomofumi Tada1, Satoru Fujitsu1, Masato Sasase1, Hiromu Tamatsukuri2, Takashi Honda2, Kazutaka Ikeda2, Toshiya Otomo2, Hideo Hosono1 (1.Tokyo Tech., 2.KEK)

Keywords:ionic conduction, hydride ion, oxyhydride

We investigated hydride ion conduction in newly found lanthanum oxyhydride, LaH3−2xOx (0 < x < 1). X-ray and neutron diffraction revealed that the LaH3−2xOx crystalizes a fcc structure, and the hydrogen partially occupies the tetrahedral and octahedral sites. We measured the ionic and electronic conductivities by AC impedance and DC polarization techniques, respectively. An optimum ionic conductivity at 340°C reached 2.6×10−2 S cm−1 at x = 0.25, where the transport number of H exceeded 99%.