14:00 〜 14:15 ▲ [11p-W521-2] Quantum-mechanical effects in atomically thin MoS2 FET 〇Nan Fang1、Kosuke Nagashio1 (1.Tokyo Univ.)
17:00 〜 17:15 ▲ [11p-W521-13] Sulfur vacancies degrade interface at valence band side in MoS2 FET 〇Nan Fang1、Kosuke Nagashio1 (1.Tokyo Univ.)