Keito Aoshima

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Speaker, Author, Co-Author

Sat. Mar 9, 2019 9:30 AM - 12:30 PM M121 (H121)

Oral presentation
| 13 Semiconductors
| 13.7 Compound and power electron devices and process technology

[9a-M121-1~11] 13.7 Compound and power electron devices and process technology

11:15 AM - 11:30 AM

△ [9a-M121-7] Changes in Capacitance-Voltage Characteristics of Al₂O₃/GaN MOS Diodes Due to Gamma-Ray Irradiation

〇(M1)Keito Aoshima¹, Shota Kaneki², Masahiro Horita^1,3, Jun Suda^1,3, Tamotsu Hashizume² (1.Nagoya Univ., 2.RCIQE, Hokkaido Univ., 3.IMaSS, Nagoya Univ.)