Oral presentation

15 Crystal Engineering » 15.2 II-VI and related compounds

[10a-W922-1~9] 15.2 II-VI and related compounds

Sun. Mar 10, 2019 9:00 AM - 11:15 AM W922 (Multi-Purpose Digital Hall)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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9:00 AM - 9:15 AM

△ [10a-W922-1] Preparation of AgGaTe₂ using Ag₂Te buffer layer deposited by sputtering method

〇Aya Uruno¹, Masakazu Kobayashi^1,2 (1.Waseda Univ. Dept. of Elec. Eng. & Biosci., 2.Kagami Mem. Res. Inst. for Mat. Sci. & Technol.)

9:15 AM - 9:30 AM

[10a-W922-2] Fabrication of Cu₂ZnSnS₄ films using spin-coated Cu-Zn-Sn precursor film and dimethyl selenide

〇Masahiro Tahashi¹, Makoto Takahashi¹, Hideo Goto¹, Takashi Harada², Shigeru Ikeda³, Kenji Yoshino⁴ (1.Chubu Univ., 2.Osaka Univ., 3.Konan Univ., 4.Univ. of Miyazaki)

9:30 AM - 9:45 AM

[10a-W922-3] MOVPE growth of thick n-CdTe layers with high electron density grown on (211)Si substrate [Ⅰ]

〇Ryo Tori¹, T Mori¹, R Tamura¹, Y Higashira¹, Y Agata¹, M Niraula¹, K Yasuda¹ (1.NIT)

9:45 AM - 10:00 AM

[10a-W922-4] MOVPE growth of thick n-CdTe layers with high electron density grown on (211)Si substrate[Ⅱ]

〇Yuki Higashira¹, T Mori¹, R Tamura¹, R Tori¹, Y Agata¹, M Niraula¹, K Yasuda¹ (1.Nagoya Institute of Technology)

10:00 AM - 10:15 AM

▼ [10a-W922-5] Growth of Al-doped ZnCdO thin films on MgO substrates by molecular beam epitaxy

〇(M2)HyoChang Jang¹, Kento Matsuo¹, Katsuhiko Saito¹, Qixin Guo¹, Tooru Tanaka¹ (1.Saga Univ.)

10:15 AM - 10:30 AM

[10a-W922-6] Compositional dependence of properties of Cl-doped ZnCdTeO epilayers by MBE

〇Yusuke Watanabe¹, Takuro Mine¹, Kento Matsuo¹, Katsuhiko Saito¹, Qixin Guo¹, Tooru Tanaka¹ (1.Saga Univ.)

10:30 AM - 10:45 AM

[10a-W922-7] MBE growth of P-doped ZnTe epilayers using InP as a dopant source

〇Seiya Mishima¹, Kento Matsuo¹, Katsuhiko Saito¹, Qixin Guo¹, Keisuke Yamane², Akihiro Wakahara², Tooru Tanaka¹ (1.Saga Univ., 2.Toyohashi Univ. Technol.)

10:45 AM - 11:00 AM

[10a-W922-8] Investigation of the ZnCdSe/MgZnCdSe/MgZnSeTe yellow laser diode structure on InP substrates

〇Keiji Maeda¹, Kenta Ishii¹, Hodaka Kobayashi¹, Ichirou Nomura¹ (1.Sophia Univ.)

11:00 AM - 11:15 AM

[10a-W922-9] Development of high gain ZnSe-based organic-inorganic hybrid ultraviolet avalanche photodiodes.

〇Yuki Ichikawa¹, Tanaka Keita¹, Yuta Fujii², Takuro Kawahara¹, Kazuki Nakagawa¹, Kentaro Yoshida², Tomoki Abe¹, Hirofumi Kasada¹, Koji Ando¹, Kunio Ichino¹, Kazuaki Akaiwa¹ (1.Tottori Univ., 2.Tottori Univ)

Session information

[10a-W922-1~9] 15.2 II-VI and related compounds

△ [10a-W922-1] Preparation of AgGaTe₂ using Ag₂Te buffer layer deposited by sputtering method

[10a-W922-2] Fabrication of Cu₂ZnSnS₄ films using spin-coated Cu-Zn-Sn precursor film and dimethyl selenide

[10a-W922-3] MOVPE growth of thick n-CdTe layers with high electron density grown on (211)Si substrate [Ⅰ]

[10a-W922-4] MOVPE growth of thick n-CdTe layers with high electron density grown on (211)Si substrate[Ⅱ]

▼ [10a-W922-5] Growth of Al-doped ZnCdO thin films on MgO substrates by molecular beam epitaxy

[10a-W922-6] Compositional dependence of properties of Cl-doped ZnCdTeO epilayers by MBE

[10a-W922-7] MBE growth of P-doped ZnTe epilayers using InP as a dopant source

[10a-W922-8] Investigation of the ZnCdSe/MgZnCdSe/MgZnSeTe yellow laser diode structure on InP substrates

[10a-W922-9] Development of high gain ZnSe-based organic-inorganic hybrid ultraviolet avalanche photodiodes.

Authentication

Session information

[10a-W922-1~9] 15.2 II-VI and related compounds

△ [10a-W922-1] Preparation of AgGaTe2 using Ag2Te buffer layer deposited by sputtering method

[10a-W922-2] Fabrication of Cu2ZnSnS4 films using spin-coated Cu-Zn-Sn precursor film and dimethyl selenide

[10a-W922-3] MOVPE growth of thick n-CdTe layers with high electron density grown on (211)Si substrate [Ⅰ]

[10a-W922-4] MOVPE growth of thick n-CdTe layers with high electron density grown on (211)Si substrate[Ⅱ]

▼ [10a-W922-5] Growth of Al-doped ZnCdO thin films on MgO substrates by molecular beam epitaxy

[10a-W922-6] Compositional dependence of properties of Cl-doped ZnCdTeO epilayers by MBE

[10a-W922-7] MBE growth of P-doped ZnTe epilayers using InP as a dopant source

[10a-W922-8] Investigation of the ZnCdSe/MgZnCdSe/MgZnSeTe yellow laser diode structure on InP substrates

[10a-W922-9] Development of high gain ZnSe-based organic-inorganic hybrid ultraviolet avalanche photodiodes.

Authentication

△ [10a-W922-1] Preparation of AgGaTe₂ using Ag₂Te buffer layer deposited by sputtering method

[10a-W922-2] Fabrication of Cu₂ZnSnS₄ films using spin-coated Cu-Zn-Sn precursor film and dimethyl selenide