2019年第66回応用物理学会春季学術講演会

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一般セッション(口頭講演)

10 スピントロニクス・マグネティクス » 10.2 スピン基盤技術・萌芽的デバイス技術

[10a-M101-9~12] 10.2 スピン基盤技術・萌芽的デバイス技術

2019年3月10日(日) 11:30 〜 12:30 M101 (H101)

水口 将輝(東北大)

11:45 〜 12:00

[10a-M101-10] First-principles calculation of Seebeck coefficients for Fe/MgO/Fe and Fe/MgAl2O4/Fe magnetic tunneling junctions

Kaoru Yamamoto1、Keisuke Masuda1、Ken-ichi Uchida1,2,3、Yoshio Miura1 (1.NIMS、2.The Univ. of Tokyo、3.CSRN Tohoku Univ.)

キーワード:tunnel magneto-Seebeck effect, magnetic tunneling junction, first-principles calculation

We calculated the Seebeck coefficients and the tunnel magneto-Seebeck (TMS) ratios of Fe(5ML)/MgO(5ML)/Fe(5ML) and Fe(5ML)/MgAl2O4(9ML)/Fe(5ML) magnetic tunneling junctions (MTJs) using the first-principles density functional method. The electronic transport coefficients of the MTJ were calculated from the Landauer formula. We obtained positive values of the Seebeck coefficients for the Fe/MgAl2O4/Fe MTJ around 300K, while we obtained negative ones for the Fe/MgO/Fe MTJ, which was explained by considering the energy dependence of the electronic conductance relative to the Fermi energy. For the Fe/MgO/Fe MTJ in parallel and anti-parallel configurations, large electronic conductance was obtained above the Fermi energy, which results in the negative Seebeck coefficients in almost all the temperatures, while for the Fe/MgAl2O4/Fe MTJ, large electronic conductance was obtained below the Fermi energy, which results in the positive ones. These results may help to understand the origin of the TMS effects.